Opening through 200 mm Silicon Carbide Epitaxy

Silicon epitaxy below 200°C: Towards thin crystalline solar cells

Low temperature plasma processes provide a toolbox for etching, texturing and deposition of a wide range of materials. Here we present a bottom up approach to grow epitaxial crystalline silicon films (epi-Si) by standard RFPECVD at temperatures below 200°C. Booth structural and electronic properties of the epitaxial layers are investigated. Proof of high crystalline quality is deduced from spec...

Silicon Nitride and Silicon Carbide

Epitaxy of nanocrystalline silicon carbide on Si(111) at room temperature.

Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C(60)) supersonic beam. Chemical processes, such as C(60) rupture, are ac...

Boron carbide/n-silicon carbide heterojunction diodes

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

Donor-acceptor co-doped SiC is a promising light converter for novel monolithic all-semiconductor white LEDs due to its broad-band donor-acceptor pair luminescence and potentially high internal quantum efficiency. Besides sufficiently high doping concentrations in an appropriate ratio yielding short radiative lifetimes, long nonradiative lifetimes are crucial for efficient light conversion. The...